photodetector,optical-fiber communication,radar information processing,electronic warfare,antenna measurement
photodetector,optical-fiber communication,radar information processing,electronic warfare,antenna measurement
High speed amplified microwave photodetector
High speed amplified microwave photodetector

High speed amplified microwave photodetector

  • single gain (S)
  • double gain (D)
  • high saturation (H)

   Download: Specification of Optical


AMPD High Speed amplified microwave InGaAs Photodetector

Typical & Absolute Maximum Rating (TC = 22±3℃) 

Parameter

Sym.

Typ

Rating

Unit

Storage temperature range

TSTG

-45 ~ +85

-55 ~ +100

Operating case temperature range

TC

25

-40 ~ +85

Bias Voltage

VR

5

5 ~ 12

V

Optical Input Power

Pin

0

13

dBm

Lead soldering temperature

Tp

280(10s)

330(10s)

 Electrical/Optical Characteristics (TC = 22±3℃)

Parameter

Sym

Test Condition

Parameter values

Unit

Wavelength range

λ

10001650

nm

Frequency range

-

X-Band

Ku-Band

-

Small signal bandwidth

f-3dB

VR =5V,λ = 1550nm

Pin =1mW,RL=50Ω

0.1~12

0.3~18

GHz

Responsivity

Re

VR =5V, Pin=1mW

λ = 1310nm

≥0.85

A/W

λ = 1550nm

≥0.90

Amplitude Flatness

A

±1.5

dB

Output VSWR

VSWR

≤2:1

≤2.5:1

-

Output Impedance

RL

50

Ω

RF signal Gain(Typical)

G

S

D

S

D

dB

13

23

13

23

 Dark current

Id

VR =5V

≤10

nA

Saturation Optical Power

Ps

VR =5V, λ = 1550nm

AC Modulated

≥10

dBm

Optical insert loss

OIL

≤0.5

dB

Optical return loss

Lo

λ=1.55μm, φe=100μw

≥25

dB

Typical Response Curves

X-Band Photodetector Frequency Response                                                                Ku-Band Photodetector Frequency Response 

The packages and the pins (Unit: mm)